Hangfeng Ji

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Andrei Sarua, Hangfeng Ji, K.P. Hilton et al. · IEEE Transactions on Electron Devices · 2007 · 287 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Materials +12

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Andrei Sarua, Hangfeng Ji, Martin Kuball et al. · IEEE Transactions on Electron Devices · 2006 · 255 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias

Andrei Sarua, Hangfeng Ji, Martin Kuball et al. · Applied Physics Letters · 2006 · 103 citations

Electric Field Component, Electrical Engineering, Engineering +13

Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design

J. Das, Herman Oprins, Hangfeng Ji et al. · IEEE Transactions on Electron Devices · 2006 · 75 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +18

Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy

Hangfeng Ji, Martin Kuball, Andrei Sarua et al. · IEEE Transactions on Electron Devices · 2006 · 29 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +15