Concepedia

Matthias Finken

MF

Statistics

Publications

5

Citations

123

H-Index

5

Active since

2002

Affiliations

Aixtron (Germany)(Current)

RWTH Aachen University

Matthias Finken is an author at Aixtron (Germany) specializing in materials science, semiconductor materials, and engineering.

Publications per year

2002–2014

5

Publications

5

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Hady Yacoub, Dirk Fahle, Matthias Finken et al. · Semiconductor Science and Technology · 2014 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

B. Reuters, Matthias Finken, Ada Wille et al. · Journal of Applied Physics · 2012 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

B. Reuters, J. Strate, H. Hahn et al. · Journal of Crystal Growth · 2014 · 13 citations

Engineering, Materials Engineering, Materials Science +16

Divalent admixtures to the trivalent ground-state configurations of Pr and Nd in transition-metal compounds

Yu. Kucherenko, Matthias Finken, M. Heber et al. · Physical review. B, Condensed matter · 2002 · 13 citations

Natural Sciences, Materials Science, Physics +17

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

Bartosz Foltyński, N. Garro, Martin Vallo et al. · Journal of Crystal Growth · 2014 · 11 citations

Engineering, Materials Engineering, Materials Science +14

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