Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates - Concepedia

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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

13

Citations

48

References

2014

Year

B. Reuters, J. Strate, H. Hahn, Matthias Finken, Ada Wille, M. Heuken, H. Kalisch, Andrei Vescan

Journal of Crystal Growth

Materials ScienceElectrical EngineeringEngineeringNanoelectronicsApplied PhysicsNon-planar SiSemiconductor Device FabricationSelective MovpeIngan-based Led StructuresSilicon On InsulatorMicroelectronicsOptoelectronicsCompound SemiconductorSemiconductor Device

References

	Year	Citations

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