H. Kalisch

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS₂

Daniel Schneider, Annika Grundmann, Andreas Bablich et al. · ACS Photonics · 2020 · 89 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth et al. · Journal of Physics D Applied Physics · 2014 · 84 citations

Engineering, Electrical Engineering, Materials Science +17

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth et al. · IEEE Transactions on Electron Devices · 2013 · 84 citations

Engineering, Electrical Engineering, Materials Science +15

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

H. Hahn, Gerrit Lükens, N. Ketteniss et al. · Applied Physics Express · 2011 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Simon Sanders, Dominik Stümmler, Pascal Pfeiffer et al. · Scientific Reports · 2019 · 78 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17