H. Kalisch

Highly Responsive Flexible Photodetectors Based on MOVPE Grown Uniform Few-Layer MoS₂

Daniel Schneider, Annika Grundmann, Andreas Bablich et al. · ACS Photonics · 2020 · 87 citations · Full text

Optical Materials, Molybdenum Disulfide, Responsive Flexible Photodetectors +18

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth et al. · Journal of Physics D Applied Physics · 2014 · 83 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth et al. · IEEE Transactions on Electron Devices · 2013 · 83 citations

Wide-bandgap Semiconductor, Electrical Engineering, Exceptional Performance +10

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

H. Hahn, Gerrit Lükens, N. Ketteniss et al. · Applied Physics Express · 2011 · 76 citations

Wide-bandgap Semiconductor, Electrical Engineering, Group-iii Nitride Transistors +8

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

E. Sakalauskas, H. Behmenburg, Christoph Hums et al. · Journal of Physics D Applied Physics · 2010 · 75 citations · Full text

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +18