Concepedia

Author

Alexander Pooth

RWTH Aachen University

Also Known As

A Pooth, A. Pooth, Alexander Pooth

15

Publications

525

Citations

8

H-Index

10

Concepts

All Affiliations

RWTH Aachen UniversityIQE (United Kingdom)ON Semiconductor (Belgium)University of BristolAirbus (Germany)
AP

About

Alexander Pooth is an author at RWTH Aachen University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

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7

284

2

Applied Physics

7

7

284

3

Electrical Engineering

7

7

284

4

Physics

2

2

73

5

Materials Engineering

1

1

14

Alexander Pooth

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8

Publications

510

Citations

8

H-Index

YearCitations

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee,

IEEE Transactions on Electron Devices

2017

226

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth,

Journal of Physics D Applied Physics

2014

83

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth,

IEEE Transactions on Electron Devices

2013

83

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Indranil Chatterjee, Michael J. Uren, Serge Karboyan,

IEEE Transactions on Electron Devices

2017

38

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Alexander Pooth, Michael J. Uren, Markus Cäsar,

Journal of Applied Physics

2015

35

First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

H. Hahn, B. Reuters, Alexander Pooth,

Japanese Journal of Applied Physics

2013

17

Characterization of GaN-based p-channel device structures at elevated temperatures

H. Hahn, B. Reuters, Alexander Pooth,

Semiconductor Science and Technology

2014

14

Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs

Alexander Pooth, Johan Bergsten, Niklas Rorsman,

Microelectronics Reliability

2016

14

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