Alexander Pooth

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee et al. · IEEE Transactions on Electron Devices · 2017 · 226 citations · Full text

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

B. Reuters, H. Hahn, Alexander Pooth et al. · Journal of Physics D Applied Physics · 2014 · 83 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

H. Hahn, B. Reuters, Alexander Pooth et al. · IEEE Transactions on Electron Devices · 2013 · 83 citations

Wide-bandgap Semiconductor, Electrical Engineering, Exceptional Performance +10

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Indranil Chatterjee, Michael J. Uren, Serge Karboyan et al. · IEEE Transactions on Electron Devices · 2017 · 38 citations

Wide-bandgap Semiconductor, Dynamic Ron, Electrical Engineering +13

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Alexander Pooth, Michael J. Uren, Markus Cäsar et al. · Journal of Applied Physics · 2015 · 35 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Charge Trapping +11