Markus Cäsar

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J. Uren, Marco Silvestri, Markus Cäsar et al. · IEEE Electron Device Letters · 2014 · 126 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

Michael J. Uren, Markus Cäsar, Mark Gajda et al. · Applied Physics Letters · 2014 · 105 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren et al. · 2015 · 80 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Alexander Pooth, Michael J. Uren, Markus Cäsar et al. · Journal of Applied Physics · 2015 · 37 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +16

GaN HEMTs and MMICs for space applications

Patrick Waltereit, W. Bronner, R. Quay et al. · Semiconductor Science and Technology · 2013 · 31 citations

Engineering, Electrical Engineering, Materials Science +17