W. Bronner

Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

Patrick Waltereit, S. Müller, Konrad Bellmann et al. · Journal of Applied Physics · 2009 · 46 citations

Aluminium Nitride, Layer Thickness, Electrical Engineering +13

40-Gb/s high-power modulator driver IC for lightwave communication systems

Zhihao Lao, A. Thiede, U. Nowotny et al. · IEEE Journal of Solid-State Circuits · 1998 · 42 citations

Photonics, Electrical Engineering, Data Decision Function +13

Room-temperature short-wavelength (λ∼3.7–3.9μm) GaInAs∕AlAsSb quantum-cascade lasers

Quankui Yang, C. Manz, W. Bronner et al. · Applied Physics Letters · 2006 · 41 citations

Quantum Science, Photonics, Pulse Generation +13

Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test

Markus Caesar, M. Dammann, V. M. Polyakov et al. · 2012 · 41 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Ga In As ∕ Al As Sb quantum-cascade lasers operating up to 400K

Quankui Yang, C. Manz, W. Bronner et al. · Applied Physics Letters · 2005 · 39 citations

Semiconductor Technology, Quantum Science, Photonics +15