U. Nowotny - Concepedia

Author

U. Nowotny

Fraunhofer Institute for Applied Solid State Physics

Also Known As

Nowotny, U., Nowotny, Ulrich, U. Nowotny, Ulrich Nowotny

Publications

238

Citations

H-Index

Concepts

All Affiliations

Fraunhofer Institute for Applied Solid State Physics Fraunhofer-Gesellschaft

About

U. Nowotny is an author at Fraunhofer Institute for Applied Solid State Physics specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	106
2	Electrical Engineering	5	5	106
3	Applied Physics	3	3	39
4	Computer Engineering	3	3	64
5	High-power Lasers	2	2	28

U. Nowotny

Publications

142

Citations

H-Index

Page 1

	Year	Citations
40-Gb/s high-power modulator driver IC for lightwave communication systems Zhihao Lao, A. Thiede, U. Nowotny, IEEE Journal of Solid-State Circuits PhotonicsElectrical EngineeringData Decision FunctionEngineeringModulator Driver Ic	1998	42
Dual-Gate GaN MMICs for MM-Wave Operation R. Quay, A. Tessmann, Rudolf Kiefer, IEEE Microwave and Wireless Components Letters Dual-gate Gan MmicsMicrowave CircuitsElectrical EngineeringMillimeter-wave OperationGan Hemts	2011	25
Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3- mu m gate length quantum-well HEMT's Z.-G. Wang, Manfred Berroth, U. Nowotny, IEEE Journal of Solid-State Circuits Input SignalPhotonicsElectrical Engineering20-Gb/s Optical SystemsEngineering	1993	17
28–51 GHz dynamic frequency divider based on 0.15 μm T-gate Al <sub>0.2</sub> Ga <sub>0.8</sub> As/In <sub>0.25</sub> Ga <sub>0.75</sub> As MODFETs A. Thiede, P.J. Tasker, A. Hülsmann, Electronics Letters	1993	15
15 Gbit/s integrated laser diodedriver using 0.3 μm gate lengthquantum well transistors Z.-G. Wang, Manfred Berroth, U. Nowotny, Electronics Letters Semiconductor TechnologyElectrical EngineeringLaser DiodedriverEngineeringSemiconductor Lasers	1992	11
16×16 bit parallel multiplier based on 6 K gate array with 0.3 μm AlGaAs/GaAs quantum well transistors A. Thiede, Manfred Berroth, V. Hurm, Electronics Letters Electrical EngineeringEngineeringVlsi DesignBit Parallel MultiplierElectronic Engineering	1992	11
A 3.6 gigasample/s 5 bit analog to digital converter using 0.3 /spl mu/m AlGaAs-HEMT technology F. Oehler, J. Sauerer, R. Hagelauer, Analog-to-digital ConverterHigh Speed AnalogData ConverterMixed-signal Integrated CircuitAnalog Design	1993	11
44 Gbit/s 4:1 multiplexer and 50 Gbit/s 2:1 multiplexer in pseudomorphic AlGaAs/GaAs-HEMT technology U. Nowotny, Z. Lao, A. Thiede,	2002	10

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