15 Gbit/s integrated laser diodedriver using 0.3 μm gate lengthquantum well transistors

Z.-G. Wang, Manfred Berroth, U. Nowotny, W. Gotzeina, P. Hofmann, A. Hülsmann, G. Kaufel, K. Köhler, B. Raynor, J. Schneider

Electronics Letters · 1992 · 11 citations · 0 references

Concepts

Abstract

An integrated laser diode driver was realised using enhancement/depletion 0.3 μm recessed-gate AlGaAs/GaAs quantum well transistors. Fully-open eye diagrams were observed at bit rates up to 10 Gbit/s with 50 Ω loads. The maximum DC and modulation current were 25 and 45 mA, respectively. The power consumption is less than 450 mW.