Indranil Chatterjee

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee et al. · IEEE Transactions on Electron Devices · 2017 · 226 citations · Full text

Impact of Technology Scaling on SRAM Soft Error Rates

Indranil Chatterjee, Balaji Narasimham, N. N. Mahatme et al. · IEEE Transactions on Nuclear Science · 2014 · 87 citations

Engineering, Vlsi Design, Particle Lets +16

Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs

P. Moens, Abhishek Banerjee, Michael J. Uren et al. · 2015 · 77 citations · Full text

Wide-bandgap Semiconductor, Dynamic Ron, Electrical Engineering +12

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Indranil Chatterjee, En Xia Zhang, B. L. Bhuva et al. · IEEE Transactions on Nuclear Science · 2014 · 71 citations

Device Modeling, Electrical Engineering, Total Ionizing Dose +12

Bias Dependence of Total-Dose Effects in Bulk FinFETs

Indranil Chatterjee, En Xia Zhang, B. L. Bhuva et al. · IEEE Transactions on Nuclear Science · 2013 · 53 citations

Device Modeling, Isolation Oxide, Electrical Engineering +14