Balaji Narasimham - Concepedia

Author

Balaji Narasimham

Vanderbilt University

Also Known As

B. Narasimham, Balaji Narasimham

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

Vanderbilt University Broadcom (United States)Broadcom (Israel)Cisco Systems (United States)Johnson Space Center

About

Balaji Narasimham is an author at Vanderbilt University specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	50	2.1K
2	Applied Physics	22	29	1.4K
3	Natural Sciences	5	5	318
4	Education	4	4	313
5	Medicine	3	3	56

Balaji Narasimham

Publications

2.3K

Citations

H-Index

Page 1

	Year	Citations
Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices N. Seifert, P. Slankard, Martin Kirsch, Hardware SecurityElectrical EngineeringEngineeringVlsi DesignComprehensive Summary	2006	202
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies Balaji Narasimham, B. L. Bhuva, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringVlsi DesignNuclear PhysicsIon Beam InstrumentationIntegrated Circuits	2007	170
On-Chip Characterization of Single-Event Transient Pulsewidths Balaji Narasimham, Vishwa Ramachandran, B. L. Bhuva, IEEE Transactions on Device and Materials Reliability Random Set PulsesElectrical EngineeringChip-scale PackageEngineeringVlsi Design	2006	146
Single-Event Transient Pulse Quenching in Advanced CMOS Logic Circuits Jonathan R. Ahlbin, L. W. Massengill, B. L. Bhuva, IEEE Transactions on Nuclear Science Electrical EngineeringHeavy-ion Broad-beam ExperimentsEngineeringPhysicsCircuit System	2009	144
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes Matthew J. Gadlage, Jonathan R. Ahlbin, Balaji Narasimham, IEEE Transactions on Nuclear Science Set Pulse WidthsEngineeringVlsi DesignMeasurementEducation	2010	89
Impact of Technology Scaling on SRAM Soft Error Rates Indranil Chatterjee, Balaji Narasimham, N. N. Mahatme, IEEE Transactions on Nuclear Science EngineeringVlsi DesignParticle LetsComputer ArchitectureMulti-channel Memory Architecture	2014	87
The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate Nathaniel A. Dodds, M.J. Martinez, P.E. Dodd, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsSecondary ProtonsLow-energy ProtonsRadiation Protection	2015	83
Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes Balaji Narasimham, B. L. Bhuva, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science Hardware SecurityHigh DensityElectrical EngineeringGuard BandsEngineering	2008	70
Electron-Induced Single-Event Upsets in Static Random Access Memory M. King, Robert A. Reed, Robert A. Weller, IEEE Transactions on Nuclear Science	2013	69
Quantifying the Effect of Guard Rings and Guard Drains in Mitigating Charge Collection and Charge Spread Balaji Narasimham, J. Gambles, Robert L. Shuler, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2008	63

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