Vishwa Ramachandran

On-Chip Characterization of Single-Event Transient Pulsewidths

Balaji Narasimham, Vishwa Ramachandran, B. L. Bhuva et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 146 citations

Random Set Pulses, Electrical Engineering, Chip-scale Package +12

The Effect of High-Z Materials on Proton-Induced Charge Collection

Michael A. Clemens, Nicholas C. Hooten, Vishwa Ramachandran et al. · IEEE Transactions on Nuclear Science · 2010 · 37 citations

Electrical Engineering, Heavy Ion Physic, Engineering +15

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

Akil K. Sutton, Kurt A. Moen, John D. Cressler et al. · Solid-State Electronics · 2008 · 19 citations

Engineering, Vlsi Design, Physics +6

Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs

Dale McMorrow, Jeffrey H. Warner, Sandeepan DasGupta et al. · IEEE Transactions on Nuclear Science · 2010 · 18 citations

Electrical Engineering, Engineering, Charge-collection Measurements +14

Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs

Jeffrey H. Warner, Dale McMorrow, S. Büchner et al. · IEEE Transactions on Nuclear Science · 2013 · 11 citations

Electrical Engineering, Ion Implantation, Engineering +11