Proton-induced SEU in SiGe digital logic at cryogenic temperatures

Auger coefficients for highly doped and highly excited silicon

J. Dziewior, W. Schmid · Applied Physics Letters · 1977 · 795 citations

Semiconductors, Auger Coefficients, Semiconductor Technology +13

Handbook of radiation effects

Choice Reviews Online · 1994 · 523 citations

Engineering, Radiation Physics, Radiation Effect +18

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 261 citations

Ghz F/sub Max/, Engineering, Semiconductor Device +17

On the Potential of SiGe HBTs for Extreme Environment Electronics

John D. Cressler · Proceedings of the IEEE · 2005 · 229 citations

Wide-bandgap Semiconductor, Engineering, Extreme Environments +17

Physics-based simulation of single-event effects

P.E. Dodd · IEEE Transactions on Device and Materials Reliability · 2005 · 149 citations

Engineering, Vlsi Design, Single-event Effects +24