Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The distributions of SET pulse-widths produced by heavy ions in 130-nm and 90-nm CMOS technologies are measured experimentally using an autonomous pulse characterization technique. The event cross section is the highest for SET pulses between 400 ps to 700 ps in the 130-nm process, while it is dominated by SET pulses in the range of 500 ps to 900 ps in the 90-nm process. The increasing probability of longer SET pulses with scaling is a key factor determining combinational logic soft errors in advanced technologies. Mixed mode 3D-TCAD simulations demonstrate that the variation of pulse-width results from the variation in strike location. </para>