M. Heuken

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

Engineering, Materials Engineering, Materials Science +17

Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

J. Kuzmı́k, R. Javorka, A. Alam et al. · IEEE Transactions on Electron Devices · 2002 · 214 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Direct observation of free-exciton thermalization in quantum-well structures

M. Umlauff, J. Hoffmann, H. Kalt et al. · Physical review. B, Condensed matter · 1998 · 135 citations · Full text

Engineering, Physics, Condensed Matter Physics +16

Anisotropic strain and phonon deformation potentials in GaN

Vanya Darakchieva, T. Paskova, M. Schubert et al. · Physical Review B · 2007 · 108 citations

Natural Sciences, Materials Science, Physics +17

Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer

A. Dadgar, J. Christen, T. Riemann et al. · Applied Physics Letters · 2001 · 106 citations

Engineering, Materials Engineering, Materials Science +14