M. Eickelkamp

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

N. Ketteniss, L. Rahimzadeh Khoshroo, M. Eickelkamp et al. · Semiconductor Science and Technology · 2010 · 65 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg et al. · IEEE Electron Device Letters · 2011 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

Hady Yacoub, C. Mauder, Stefano Leone et al. · IEEE Transactions on Electron Devices · 2017 · 37 citations

Wide-bandgap Semiconductor, Dynamic Properties, Electrical Engineering +14

Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Hady Yacoub, Thorsten Zweipfennig, Gerrit Lükens et al. · IEEE Transactions on Electron Devices · 2018 · 32 citations

Wide-bandgap Semiconductor, Engineering, Dynamic Properties +16

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Hady Yacoub, Dirk Fahle, M. Eickelkamp et al. · Journal of Applied Physics · 2016 · 20 citations

Stress Voltage, Electrical Engineering, Dislocation Density +12