P. Rutérana

The electronic structure of wurtzite and zincblende AlN: an<i>ab initio</i>comparative study

F. Litimein, B. Bouhafs, Z. Dridi et al. · New Journal of Physics · 2002 · 82 citations · Full text

Aluminium Nitride, Engineering, Solid-state Chemistry +16

Investigation of {10<ovl>1</ovl>2} twins in Zn using high-resolution electron microscopy: Interfacial defects and interactions

Thierry Braisaz, P. Rutérana, G. Nouet et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1997 · 62 citations

Engineering, Severe Plastic Deformation, Microscopy +20

Polarity of epitaxial layers and (<ovl>1</ovl>2<ovl>1</ovl>0)prismatic defects in GaN and AIN grown on the (0001)_Sisurface of 6H-SiC

P. Vermaut, P. Rutérana, G. Nouet · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1997 · 60 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Strain relaxation in short-period polar GaN/AlN superlattices

P. Kandaswamy, Catherine Bougerol, D. Jalabert et al. · Journal of Applied Physics · 2009 · 58 citations

Semiconductors, Materials Science, Strain Relaxation Mechanisms +13

Observation of two atomic configurations for the {1210} stacking fault in wurtzite (Ga, Al) nitrides

P. Vermaut, G. Nouet, P. Rutérana · Applied Physics Letters · 1999 · 46 citations