Raman characterization of Mg⁺ion-implanted GaN

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements

John F. Muth, J. H. Lee, I. K. Shmagin et al. · Applied Physics Letters · 1997 · 755 citations

Engineering, Materials Engineering, Materials Science +16

Very low resistance multilayer Ohmic contact to <i>n</i>-GaN

Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations

Engineering, Materials Engineering, Materials Science +17

Zone-boundary phonons in hexagonal and cubic GaN

H. Siegle, G. Kaczmarczyk, L. Filippidis et al. · Physical review. B, Condensed matter · 1997 · 309 citations

Natural Sciences, Materials Science, Physics +16

Ion implantation doping and isolation of GaN

S. J. Pearton, C. B. Vartuli, J.C. Zolper et al. · Applied Physics Letters · 1995 · 300 citations

Engineering, Materials Engineering, Materials Science +16