Yannick Roelens - Concepedia

Author

Yannick Roelens

Institut d'électronique de microélectronique et de nanotechnologie ORCID

Also Known As

Roelens, Y., Roelens, Y. (Yannick), Roelens, Yannick, Y Roelens, Y. Roelens, Yannick Roelens

102

Publications

699

Citations

H-Index

Concepts

All Affiliations

Institut d'électronique de microélectronique et de nanotechnologie Centre National de la Recherche Scientifique Université de Lille Universidad de Salamanca Chalmers University of Technology

About

Yannick Roelens is an author at Institut d'électronique de microélectronique et de nanotechnologie specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	546
2	Applied Physics	13	16	546
3	Electrical Engineering	12	15	485
4	Physics	10	10	452
5	Materials Science	1	1	11

Yannick Roelens

Publications

585

Citations

H-Index

Page 1

	Year	Citations
Room-temperature terahertz emission from nanometer field-effect transistors N. Dyakonova, A. El Fatimy, J. Lusakowskil, Applied Physics Letters Electrical EngineeringTerahertz TechnologyTerahertz SpectroscopyEngineeringPhysics	2006	135
Room temperature tunable detection of subterahertz radiation by plasma waves in nanometer InGaAs transistors F. Teppe, M. L. Orlov, A. El Fatimy, Applied Physics Letters EngineeringSubterahertz RadiationElectromagnetic CompatibilityTunable Terahertz DetectionPlasma Electronics	2006	71
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations I. Íñiguez-de-la-Torre, J. Mateos, T. González, Semiconductor Science and Technology EngineeringMonte Carlo SimulatorSelf-consistent ModelCharge TransportNanoelectronics	2007	61
Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors A. Shchepetov, C. Gardès, Yannick Roelens, Applied Physics Letters Electrical EngineeringPlasma ElectronicsTerahertz SpectroscopyEngineeringPhysics	2008	56
Nonlinear Effects in T-Branch Junctions J. Mateos, B. G. Vasallo, D. Pardo, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsNonlinear Circuit	2004	52
Comparison Between the Noise Performance of Double- and Single-Gate InP-Based HEMTs B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2008	25
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation G. Moschetti, Niklas Wadefalk, Per-Åke Nilsson, Solid-State Electronics Electrical EngineeringEngineeringInas/alsb HemtsElectronic EngineeringCryogenics	2011	21
Sb-HEMT: Toward 100-mV Cryogenic Electronics Albert Noudeviwa, Yannick Roelens, F. Danneville, IEEE Transactions on Electron Devices Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesCharacteristics Improvement	2010	21
Three-terminal junctions operating as mixers, frequency doublers and detectors: a broad-band frequency numerical and experimental study at room temperature I. Íñiguez-de-la-Torre, T. González, D. Pardo, Semiconductor Science and Technology	2010	18
Terahertz emission induced by optical beating in nanometer-length field-effect transistors P. Nouvel, J. Torres, S. Blin, Journal of Applied Physics PhotonicsElectrical EngineeringHigh Spectral PurityTerahertz SpectroscopyPhoto-induced Terahertz Radiation	2012	16

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