T. González - Concepedia

Author

T. González

Also Known As

Gonzalez, T., Gonzalez, Tomas, González, T., González, Tomas, González, Tomás, Houlet, P., T Gonzalez, T Gonzalez Sanchez, T González, T. GONZÁLEZ

421

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Universidad de Salamanca Centre National de la Recherche Scientifique Institut d'électronique de microélectronique et de nanotechnologie Université de Montpellier Istituto Nazionale per la Fisica della Materia

About

T. González is an author at Universidad de Salamanca specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	29	87	2.6K
2	Applied Physics	29	83	2.5K
3	Electrical Engineering	28	84	2.5K
4	Computer Engineering	10	10	298
5	Natural Sciences	5	5	198

T. González

106

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor J. Łusakowski, W. Knap, N. Dyakonova, Journal of Applied Physics Thz PhotonicsTerahertz TechnologyEngineeringTerahertz PhotonicsQuantum Engineering	2005	146
Microwave Detection at 110 GHz by Nanowires with Broken Symmetry Claudio Balocco, Aimin Song, Magnus Åberg, Nano Letters	2005	108
Monte Carlo simulator for the design optimization of low-noise HEMTs J. Mateos, T. González, D. Pardo, IEEE Transactions on Electron Devices EngineeringMonte Carlo SimulatorStructural OptimizationElectromagnetic CompatibilitySemiconductor Device	2000	102
Operation and high-frequency performance of nanoscale unipolar rectifying diodes J. Mateos, B. G. Vasallo, D. Pardo, Applied Physics Letters Electrical EngineeringEngineeringPhysicsNanotechnologyElectronic Engineering	2005	88
Microscopic modeling of nonlinear transport in ballistic nanodevices J. Mateos, B. G. Vasallo, D. Pardo, IEEE Transactions on Electron Devices EngineeringNanodevicesCharge TransportElectron PhysicNonlinear Transport	2003	87
Microscopic simulation of electronic noise in semiconductor materials and devices L. Varani, L. Reggiani, T. Kühn, IEEE Transactions on Electron Devices EngineeringSemiconductor PhysicsCharge TransportSemiconductor DeviceSemiconductors	1994	83
Improved Monte Carlo algorithm for the simulation of δ-doped AlInAs/GaInAs HEMTs J. Mateos, T. González, D. Pardo, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringδ-Doped Alinas/gainas HemtsClassical Monte CarloSemiconductor Device	2000	81
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels Paul Sangaré, Guillaume Ducournau, B. Grimbert, Journal of Applied Physics Algan/gan NanodevicesTerahertz TechnologyAlgan/gan Asymmetric NanochannelsEngineeringTerahertz Photonics	2013	71
Physical models of ohmic contact for Monte Carlo device simulation T. González, Daniel Pardo Solid-State Electronics EngineeringSimulationComputational MechanicsContact MechanicNumerical Simulation	1996	71
Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs B. G. Vasallo, Nicolas Wichmann, Sylvain Bollaert, IEEE Transactions on Electron Devices	2007	68

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