Microwave Detection at 110 GHz by Nanowires with Broken Symmetry

TLDR

The nanowires employ a novel principle that enables efficient microwave detection without dc bias and can be fabricated with a single lithography step and planar architecture, allowing scalable arrays over large areas. Using broken‑symmetry nanowire arrays, the authors achieved room‑temperature detection of microwaves up to 110 GHz—the fastest reported for such nanostructures—while maintaining stable sensitivity from 100 MHz to 110 GHz, achieving ~75 mV dc/mW at 110 GHz and detecting −25 dBm signals at zero bias.

Abstract

By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect −25 dBm 110 GHz microwaves at zero bias with a standard setup.