M. Alomari

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 150 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Stability +8

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

J. Anaya, Stefano Rossi, M. Alomari et al. · Acta Materialia · 2015 · 125 citations · Full text

Materials Science, Diamond-like Carbon, Engineering +10

Barrier-Layer Scaling of InAlN/GaN HEMTs

Farid Medjdoub, M. Alomari, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2008 · 113 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +14

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

David Maier, M. Alomari, N. Grandjean et al. · IEEE Electron Device Letters · 2012 · 108 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

M. Alomari, Farid Medjdoub, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2009 · 71 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11