Martin Neuburger

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 139 citations

Engineering, Materials Science, Physics +17

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart et al. · IEEE Electron Device Letters · 2006 · 126 citations

Engineering, Materials Engineering, Materials Science +17

Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon

J. Kuzmı́k, S. Bychikhin, Martin Neuburger et al. · IEEE Transactions on Electron Devices · 2005 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave performance evaluation of diamond surface channel FETs

M. Kubovič, Makoto Kasu, Ingmar Kallfass et al. · Diamond and Related Materials · 2004 · 78 citations

Engineering, Electrical Engineering, Materials Science +14

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 71 citations

Engineering, Electrical Engineering, Materials Science +17