Martin Neuburger

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 138 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart et al. · IEEE Electron Device Letters · 2006 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon

J. Kuzmı́k, S. Bychikhin, Martin Neuburger et al. · IEEE Transactions on Electron Devices · 2005 · 85 citations

Wide-bandgap Semiconductor, Electrical Engineering, Pulsed Operation +13

Microwave performance evaluation of diamond surface channel FETs

M. Kubovič, Makoto Kasu, Ingmar Kallfass et al. · Diamond and Related Materials · 2004 · 77 citations

Electrical Engineering, Microwave Performance Evaluation, Engineering +6

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 70 citations

Wide-bandgap Semiconductor, Electronic Transients, Electrical Engineering +13