E. Kohn

Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

I. Daumiller, C. Kirchner, M. Kamp et al. · IEEE Electron Device Letters · 1999 · 179 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Farid Medjdoub, J.‐F. Carlin, M. Gonschorek et al. · 2006 · 176 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Current instabilities in GaN-based devices

I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Barrier-Layer Scaling of InAlN/GaN HEMTs

Farid Medjdoub, M. Alomari, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2008 · 113 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Status of the Emerging InAlN/GaN Power HEMT Technology

Farid Medjdoub, J.‐F. Carlin, Christophe Gaquière et al. · The Open Electrical & Electronic Engineering Journal · 2008 · 78 citations · Full text