The Open Electrical & Electronic Engineering Journal · 2008 · 78 citations · 23 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHeterostructure DevicesHigh-temperature PerformanceLow-temperature PerformanceSemiconductor HeterojunctionsThermal Stability
The InAlN/GaN heterojunction appears to be a new alternative to the common AlGaN/GaN configuration with higher sheet charge density and higher thermal stability, promising very high power and temperature performance as well as robustness. This new system opens up the possibility to scale the barrier down to 5 nm while maintaining nearly its ideal materials and device properties. The status, focussing on the lattice matched materials configuration, is reviewed.
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