High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing, +6

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringField-effect TransistorsSemiconductor DeviceSemiconductors +14

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing, +15

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsMovpe GrowthGan Power Device

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +9

Diamond junction FETs based on δ-doped channels

A. Aleksov, Andrei Vescan, M. Kunze, +5

Diamond and Related Materials

Electrical EngineeringEngineeringDiamond Junction FetsElectronic EngineeringApplied Physics

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze, +7

IEEE Transactions on Microwave Theory and Techniques

Wide-bandgap SemiconductorElectronic TransientsElectrical EngineeringCharge InstabilitiesEngineering +11

P-Channel InGaN-HFET Structure Based on Polarization Doping

Tom Zimmermann, Martin Neuburger, M. Kunze, +5

IEEE Electron Device Letters

SemiconductorsPolarization DopingElectrical EngineeringElectronic DevicesEngineering +12

Diamond diodes and transistors

A. Aleksov, A. Denisenko, M. Kunze, +5

Semiconductor Science and Technology

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +11

δ-Doping in diamond

M. Kunze, Andrei Vescan, G. Dollinger, +2

Carbon

SemiconductorsDiamond-like CarbonEngineeringApplied PhysicsCondensed Matter Physics +3

UNSTRAINED <font>InAlN/GaN</font> HEMT STRUCTURE

Martin Neuburger, Tom Zimmermann, E. Kohn, +8

International Journal of High Speed Electronics and Systems

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor +7

High‐current AlInN/GaN field effect transistors

A. Dadgar, Martin Neuburger, F. Schulze, +9

physica status solidi (a)

SemiconductorsSemiconductor TechnologyElectrical EngineeringProcessed FetsEngineering +7