M. Kunze

High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar, F. Schulze, J. Bläsing et al. · Applied Physics Letters · 2004 · 138 citations

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart et al. · IEEE Electron Device Letters · 2006 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Diamond junction FETs based on δ-doped channels

A. Aleksov, Andrei Vescan, M. Kunze et al. · Diamond and Related Materials · 1999 · 79 citations

Electrical Engineering, Engineering, Diamond Junction Fets +2

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 70 citations

Wide-bandgap Semiconductor, Electronic Transients, Electrical Engineering +13