Tom Zimmermann - Concepedia

Author

Tom Zimmermann

University of Notre Dame

Also Known As

T Zimmermann, T. ZIMMERMANN, T. Zimmermann, TOM ZIMMERMANN, Tom Zimmermann, Zimmermann, T. K.

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

University of Notre Dame Universität Ulm Argonne National Laboratory Otto-von-Guericke University Magdeburg University of Liège

About

Tom Zimmermann is an author at University of Notre Dame specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	966
2	Applied Physics	15	19	923
3	Electrical Engineering	14	16	684
4	Biochemistry	2	2	43
5	Biomolecular Engineering	1	1	14

Tom Zimmermann

Publications

984

Citations

H-Index

Page 1

	Year	Citations
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance Tom Zimmermann, David A. Deen, Yu Cao, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2008	173
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions Satyaki Ganguly, Jai Verma, Guowang Li, Applied Physics Letters Materials ScienceSemiconductorsPiezoelectric Polarization ChargesElectronic DevicesEngineering	2011	158
Piezoelectric GaN sensor structures Tom Zimmermann, Martin Neuburger, P. Benkart, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2006	125
P-Channel InGaN-HFET Structure Based on Polarization Doping Tom Zimmermann, Martin Neuburger, M. Kunze, IEEE Electron Device Letters SemiconductorsPolarization DopingElectrical EngineeringElectronic DevicesEngineering	2004	69
Ultra-nano-crystalline/single crystal diamond heterostructure diode Tom Zimmermann, M. Kubovič, A. Denisenko, Diamond and Related Materials Diamond-like CarbonEngineeringNanotechnologyApplied PhysicsMultilayer Heterostructures	2005	61
Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering Guowang Li, Tom Zimmermann, Yu Cao, IEEE Electron Device Letters SemiconductorsRoom TemperatureElectrical EngineeringWide-bandgap SemiconductorEngineering	2010	58
UNSTRAINED <font>InAlN/GaN</font> HEMT STRUCTURE Martin Neuburger, Tom Zimmermann, E. Kohn, International Journal of High Speed Electronics and Systems SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2004	44
Polarization-engineered removal of buffer leakage for GaN transistors Yu Cao, Tom Zimmermann, Huili Grace Xing, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringDopant-free Epitaxial TechniqueSemi-insulating Gan Templates	2010	42
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy Jia Guo, Yu Cao, Chuanxin Lian, physica status solidi (a) Sio 2Wide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2011	33
Integrated multi-sensor system for parallel in-situ monitoring of cell nutrients, metabolites, cell density and pH in biotechnological processes Stefan Mross, Tom Zimmermann, Nadine Winkin, Sensors and Actuators B Chemical EngineeringBiosensing SystemsBiochemistryBioanalysisBiochemical Engineering	2016	29

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