Jai Verma

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li et al. · Applied Physics Letters · 2011 · 158 citations

Engineering, Materials Engineering, Materials Science +17

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 137 citations

Engineering, Electrical Engineering, Materials Science +16

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Engineering, Materials Engineering, Materials Science +17

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma et al. · IEEE Electron Device Letters · 2011 · 87 citations

Engineering, Electrical Engineering, Materials Science +17

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

Jai Verma, S. M. Islam, Vladimir Protasenko et al. · Applied Physics Letters · 2014 · 86 citations

Engineering, Electrical Engineering, Materials Science +17