Satyaki Ganguly

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li et al. · Applied Physics Letters · 2011 · 158 citations

Engineering, Materials Engineering, Materials Science +17

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Guowang Li, Debdeep Jena, Ronghua Wang et al. · IEEE Electron Device Letters · 2013 · 75 citations

Engineering, Electrical Engineering, Materials Science +17

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Meng Qi, Guowang Li, Satyaki Ganguly et al. · Applied Physics Letters · 2017 · 69 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN

Guowang Li, Bo Song, Satyaki Ganguly et al. · Applied Physics Letters · 2014 · 60 citations · Full text

Engineering, Materials Engineering, Materials Science +17