Satyaki Ganguly

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li et al. · Applied Physics Letters · 2011 · 158 citations

Materials Science, Semiconductors, Piezoelectric Polarization Charges +15

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Oxide Heterostructures, Materials Science, Semiconductors +15

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Guowang Li, Debdeep Jena, Ronghua Wang et al. · IEEE Electron Device Letters · 2013 · 74 citations

Semiconductors, Materials Engineering, Electrical Engineering +11

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Meng Qi, Guowang Li, Satyaki Ganguly et al. · Applied Physics Letters · 2017 · 68 citations · Full text

Semiconductors, Aluminium Nitride, Electrical Engineering +14

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

Satyaki Ganguly, Aniruddha Konar, Zongyang Hu et al. · Applied Physics Letters · 2012 · 58 citations

Polarization Fields, Wide-bandgap Semiconductor, Electrical Engineering +12