John Simon

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

John Simon, Vladimir Protasenko, Chuanxin Lian et al. · Science · 2009 · 793 citations

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Tom Zimmermann, David A. Deen, Yu Cao et al. · IEEE Electron Device Letters · 2008 · 173 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Polarization-Induced Zener Tunnel Junctions in Wide-Band-Gap Heterostructures

John Simon, Ze Zhang, Kevin Goodman et al. · Physical Review Letters · 2009 · 129 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Kinetically limited growth of GaAsBi by molecular-beam epitaxy

Aaron J. Ptak, Ryan M. France, Daniel A. Beaton et al. · Journal of Crystal Growth · 2011 · 114 citations

Semiconductors, Engineering, Applied Physics +4

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Oxide Heterostructures, Materials Science, Semiconductors +15