Chuanxin Lian

Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

John Simon, Vladimir Protasenko, Chuanxin Lian et al. · Science · 2009 · 793 citations

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

Libai Huang, Gregory V. Hartland, Li‐Qiang Chu et al. · Nano Letters · 2010 · 181 citations

Graphene Nanomeshes, Graphene-based Nano-antennas, Epitaxial Graphene +12

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 155 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Oxide Heterostructures, Materials Science, Semiconductors +15

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering

Guowang Li, Tom Zimmermann, Yu Cao et al. · IEEE Electron Device Letters · 2010 · 58 citations

Semiconductors, Room Temperature, Electrical Engineering +10