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Yuanzheng Yue, Zongyang Hu, Jia Guo, +13

IEEE Electron Device Letters

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Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li, +3

Applied Physics Letters

Materials ScienceSemiconductorsPiezoelectric Polarization ChargesElectronic DevicesEngineering +13

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria, +12

IEEE Electron Device Letters

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210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Ronghua Wang, Guowang Li, Oleg Laboutin, +6

IEEE Electron Device Letters

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Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang, +11

physica status solidi (a)

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Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo, +12

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +9

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma, +11

IEEE Electron Device Letters

Gan-based HemtsSemiconductor TechnologyElectrical Engineering66-Nm-long Gate DeviceEngineering +7

Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

Guowang Li, Debdeep Jena, Ronghua Wang, +7

IEEE Electron Device Letters

SemiconductorsMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +9

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Ronghua Wang, Guowang Li, Golnaz Karbasian, +11

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesCutoff Frequencies +13

Strained GaN quantum-well FETs on single crystal bulk AlN substrates

Meng Qi, Guowang Li, Satyaki Ganguly, +8

Applied Physics Letters

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