Guowang Li

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

Satyaki Ganguly, Jai Verma, Guowang Li et al. · Applied Physics Letters · 2011 · 158 citations

Materials Science, Semiconductors, Piezoelectric Polarization Charges +15

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Ronghua Wang, Guowang Li, Oleg Laboutin et al. · IEEE Electron Device Letters · 2011 · 101 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design

Debdeep Jena, John Simon, Albert Wang et al. · physica status solidi (a) · 2011 · 92 citations · Full text

Oxide Heterostructures, Materials Science, Semiconductors +15