Oleg Laboutin

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 119 citations

Engineering, Electrical Engineering, Materials Science +17

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Ronghua Wang, Guowang Li, Oleg Laboutin et al. · IEEE Electron Device Letters · 2011 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma et al. · IEEE Electron Device Letters · 2011 · 87 citations

Engineering, Electrical Engineering, Materials Science +17

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Ronghua Wang, Guowang Li, Golnaz Karbasian et al. · IEEE Electron Device Letters · 2013 · 72 citations

Engineering, Electrical Engineering, Materials Science +17

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo, Tsung-Sheng Kang, Lu Liu et al. · Applied Physics Letters · 2010 · 66 citations

Engineering, Electrical Engineering, Materials Science +17