Oleg Laboutin

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

Ronghua Wang, Guowang Li, Oleg Laboutin et al. · IEEE Electron Device Letters · 2011 · 101 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Ronghua Wang, Guowang Li, Jai Verma et al. · IEEE Electron Device Letters · 2011 · 85 citations

Gan-based Hemts, Semiconductor Technology, Electrical Engineering +9

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Ronghua Wang, Guowang Li, Golnaz Karbasian et al. · IEEE Electron Device Letters · 2013 · 71 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo, Tsung-Sheng Kang, Lu Liu et al. · Applied Physics Letters · 2010 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9