Tsung-Sheng Kang

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo, Tsung-Sheng Kang, Lu Liu et al. · Applied Physics Letters · 2010 · 66 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

M. R. Holzworth, Nicholas G. Rudawski, S. J. Pearton et al. · Applied Physics Letters · 2011 · 33 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping

Tsung-Sheng Kang, F. Ren, S. J. Pearton et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2015 · 25 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors

Chien-Fong Lo, Lu Liu, Tsung-Sheng Kang et al. · Electrochemical and Solid-State Letters · 2011 · 22 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +10

Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts

Patrick Whiting, Nicholas G. Rudawski, M. R. Holzworth et al. · Microelectronics Reliability · 2017 · 18 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10