Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation

Thomas L. Bougher, Luke Yates, Chien-Fong Lo, +3

Nanoscale and Microscale Thermophysical Engineering

Wide-bandgap SemiconductorLayer ThicknessElectrical EngineeringSemiconductor TechnologyEngineering +13

Degradation Mechanisms for GaN and GaAs High Speed Transistors

David Cheney, E Douglas, Lu Liu, +3

Materials

Materials EngineeringReliability IssuesElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors

Chih-Yang Chang, E Douglas, Jin-Hyung Kim, +11

IEEE Transactions on Device and Materials Reliability

Wide-bandgap SemiconductorElectrical EngineeringEngineeringDegradation FieldDc Stress +7

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Lu Liu, Chien-Fong Lo, Yuyin Xi, +13

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorMev Protons +7

Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging

Georges Pavlidis, Luke Yates, Dustin Kendig, +4

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsNanoelectronics +11

Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors

Hong-Yeol Kim, Jihyun Kim, Lu Liu, +3

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringEnergy-dependent Penetration Depth +8

Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions

Ya-Shi Hwang, Lu Liu, F. Ren, +12

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +11

Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors

Chih-Yang Chang, Travis J. Anderson, Jennifer K. Hite, +12

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics +7

ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications

S. J. Pearton, Chin‐Wei Chang, B. H. Chu, +4

IEEE Journal of Selected Topics in Quantum Electronics

EngineeringGas SensorChemistryInn Functionalized NanowiresHydrogen Gas +17

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Chien-Fong Lo, Yuyin Xi, Lu Liu, +6

Sensors and Actuators B Chemical

Electrical EngineeringEngineeringNanoelectronicsNanotechnologyApplied Physics +3