E Douglas

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

Robert Kaplar, Andrew A. Allerman, Andrew Armstrong et al. · ECS Journal of Solid State Science and Technology · 2016 · 143 citations · Full text

An AlN/Al0.85Ga0.15N high electron mobility transistor

Albert G. Baca, Andrew Armstrong, Andrew A. Allerman et al. · Applied Physics Letters · 2016 · 139 citations · Full text

Al Composition, Wide-bandgap Semiconductor, Electrical Engineering +9

High mobility InGaZnO4 thin-film transistors on paper

Wantae Lim, E Douglas, S.-H. Kim et al. · Applied Physics Letters · 2009 · 92 citations

Materials Science, Electrical Engineering, Electronic Devices +11

Al-rich AlGaN based transistors

Albert G. Baca, Andrew Armstrong, Brianna Klein et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2020 · 85 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Low-voltage indium gallium zinc oxide thin film transistors on paper substrates

Wantae Lim, E Douglas, D. P. Norton et al. · Applied Physics Letters · 2010 · 78 citations

Engineering, Film Transistors, Optoelectronic Devices +18