Applied Physics Letters · 2016 · 144 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsBreakdown VoltageGallium NitrideGate LeakageGate Leakage CurrentGate Oxide LeakageHeterostructure DevicesHeterostructure Field-effect TransistorsHigh-electron-mobility Transistors
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.
26
GaN-Based RF Power Devices and Amplifiers
Umesh K. Mishra, Likun Shen, T.E. Kazior et al. · Proceedings of the IEEE · 2008 · 1.8K citations