Gate Leakage Current

Gate Leakage Current is the small electric current that flows through the gate oxide of a MOS capacitor due to quantum mechanical tunneling or Fowler-Nordheim tunneling, distinguishing it from other leakage mechanisms by its dependence on the thinness of the insulating layer and the applied gate voltage.

1.7K

Publications

76.7K

Citations

7.1K

Authors

986

Institutions

Publications per year

2017–2026

283

Authors

7.1K

  1. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    21 publications · 2.6K citations

    18

    h-index

  2. GM
    Gaudenzio Meneghesso

    University of Padua, Italy

    18 publications · 1.4K citations

    17

    h-index

  3. UK
    Umesh K. Mishra

    University of California, Santa Barbara, United States

    19 publications · 1K citations

    17

    h-index

  4. GS
    G. Simin

    University of South Carolina, United States

    16 publications · 1.8K citations

    15

    h-index

  5. AP
    A. Paccagnella

    University of Padua, Italy

    18 publications · 858 citations

    15

    h-index

1–5 of 7.1K

Venues

  1. IEEE Electron Device Letters

    210 publications · 12K citations

    58

    h-index

  2. Applied Physics Letters

    201 publications · 12.6K citations

    58

    h-index

  3. IEEE Transactions on Electron Devices

    217 publications · 12.4K citations

    52

    h-index

  4. Journal of Applied Physics

    72 publications · 3.4K citations

    32

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 64 publications · 1.5K citations

    23

    h-index

1–5