Torben R. Fortune

An AlN/Al0.85Ga0.15N high electron mobility transistor

Albert G. Baca, Andrew Armstrong, Andrew A. Allerman et al. · Applied Physics Letters · 2016 · 144 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Mesa-isolated InGaAs photodetectors with low dark current

John F. Klem, J. K. Kim, M. J. Cich et al. · Applied Physics Letters · 2009 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Michael Goldflam, Emil Kadlec, B. V. Olson et al. · Applied Physics Letters · 2016 · 57 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +17

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Albert G. Baca, Brianna Klein, Andrew A. Allerman et al. · ECS Journal of Solid State Science and Technology · 2017 · 49 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Comparison of nBn and nBp mid-wave barrier infrared photodetectors

John F. Klem, Jungkwun Kim, M. J. Cich et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2010 · 46 citations

Engineering, Electrical Engineering, Materials Science +17