J. K. Kim

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Yigit Aytac, B. V. Olson, J. K. Kim et al. · Applied Physics Letters · 2014 · 73 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mesa-isolated InGaAs photodetectors with low dark current

John F. Klem, J. K. Kim, M. J. Cich et al. · Applied Physics Letters · 2009 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices

B. V. Olson, C. H. Grein, J. K. Kim et al. · Applied Physics Letters · 2015 · 39 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices

Yigit Aytac, B. V. Olson, J. K. Kim et al. · Journal of Applied Physics · 2016 · 37 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Effects of electron doping level on minority carrier lifetimes in <i>n</i>-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Emil Kadlec, B. V. Olson, Michael Goldflam et al. · Applied Physics Letters · 2016 · 31 citations · Full text

Engineering, Electrical Engineering, Materials Science +17