Applied Physics Letters · 2014 · 73 citations · 25 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsInfrared Optical MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAlloy Composition EffectsAuger DecayBand GapCarrier Lifetime MeasurementCarrier RecombinationCarrier Recombination DynamicsCharge Carrier RecombinationLayer Thickness Effects
Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ≃235 ± 10 meV was achieved for all five unintentionally doped T2SLs. Carrier lifetimes were determined by fitting a rate equation model to the density dependent data. Minority carrier lifetimes as long as 10 μs were measured. On the other hand, the Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously measured for InAs/GaSb T2SLs. The minority carrier and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness.
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Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 306 citations