Samuel D. Hawkins

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

B. V. Olson, Eric A. Shaner, J. K. Kim et al. · Applied Physics Letters · 2012 · 214 citations

Natural Sciences, Materials Science, Physics +17

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

B. V. Olson, Eric A. Shaner, Jungkwun Kim et al. · Applied Physics Letters · 2013 · 86 citations

Natural Sciences, Materials Science, Physics +17

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Yigit Aytac, B. V. Olson, J. K. Kim et al. · Applied Physics Letters · 2014 · 73 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Mesa-isolated InGaAs photodetectors with low dark current

John F. Klem, J. K. Kim, M. J. Cich et al. · Applied Physics Letters · 2009 · 59 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Michael Goldflam, Emil Kadlec, B. V. Olson et al. · Applied Physics Letters · 2016 · 57 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +17