B. V. Olson

Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

B. V. Olson, Eric A. Shaner, J. K. Kim et al. · Applied Physics Letters · 2012 · 211 citations

Optical Materials, Engineering, Optical Transmission System +17

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys

B. V. Olson, Eric A. Shaner, Jungkwun Kim et al. · Applied Physics Letters · 2013 · 84 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +12

Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices

Yigit Aytac, B. V. Olson, J. K. Kim et al. · Applied Physics Letters · 2014 · 72 citations · Full text

Materials Science, Layer Thickness, Wide-bandgap Semiconductor +12

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Michael Goldflam, Emil Kadlec, B. V. Olson et al. · Applied Physics Letters · 2016 · 57 citations · Full text

Resonant Structures, Engineering, Absorption Spectroscopy +19

Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Daniel Zuo, Runyu Liu, Daniel Wasserman et al. · Applied Physics Letters · 2015 · 38 citations · Full text

Wide-bandgap Semiconductor, Categoryquantum Electronics, Optical Materials +17