Concepedia

Golnaz Karbasian

GK

Statistics

Publications

13

Citations

1.3K

H-Index

12

Active since

2012

Affiliations

University of California, Berkeley(Current)

University of Notre Dame

Intel (United States)

Lawrence Berkeley National Laboratory

Center for Nanoscale Science and Technology

Golnaz Karbasian is an author at University of California, Berkeley specializing in materials science, semiconductor devices, and electronic materials.

Publications per year

2012–2023

13

Publications

13

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj Cheema, Daewoong Kwon, Nirmaan Shanker et al. · Nature · 2020 · 887 citations · Full text

, , +14

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf<sub>0.8</sub>Zr<sub>0.2</sub>O<sub>2</sub>, High Endurance and Breakdown Recovery

Korok Chatterjee, Sangwan Kim, Golnaz Karbasian et al. · IEEE Electron Device Letters · 2017 · 102 citations

, , +17

Stabilization of ferroelectric phase in tungsten capped Hf0.8Zr0.2O2

Golnaz Karbasian, Roberto dos Reis, Ajay K. Yadav et al. · Applied Physics Letters · 2017 · 78 citations · Full text

, , +17

Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz

Ronghua Wang, Guowang Li, Golnaz Karbasian et al. · IEEE Electron Device Letters · 2013 · 72 citations

, , +17

InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and<i>f</i><sub>T</sub>/<i>f</i><sub>max</sub>of 260/220 GHz

Ronghua Wang, Guowang Li, Golnaz Karbasian et al. · Applied Physics Express · 2013 · 42 citations

, , +17

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