Faiza Faria

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · IEEE Electron Device Letters · 2012 · 334 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz

Yuanzheng Yue, Zongyang Hu, Jia Guo et al. · Japanese Journal of Applied Physics · 2013 · 89 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

Jimy Encomendero, Faiza Faria, S. M. Islam et al. · Physical Review X · 2017 · 58 citations · Full text

Engineering, Semiconductors, Electronic Devices +18

Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Faiza Faria, Jia Guo, Pei Zhao et al. · Applied Physics Letters · 2012 · 52 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12