P. Saunier

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

U. Chowdhury, J. L. Jiménez, C. Lee et al. · IEEE Electron Device Letters · 2008 · 159 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +14

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

Ronghua Wang, P. Saunier, Xiu Xing et al. · IEEE Electron Device Letters · 2010 · 155 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +10

A Wideband Power Amplifier MMIC Utilizing GaN on SiC HEMT Technology

Charles F. Campbell, Cathy Lee, Victoria Williams et al. · IEEE Journal of Solid-State Circuits · 2009 · 154 citations

Electrical Engineering, Sic Device Technology, Engineering +13

MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$

Jia Guo, Guowang Li, Faiza Faria et al. · IEEE Electron Device Letters · 2012 · 133 citations

Wide-bandgap Semiconductor, Mbe-regrown Ohmics, Electrical Engineering +13

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Dong Seup Lee, Han Wang, Allen Hsu et al. · IEEE Electron Device Letters · 2013 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12