Publication | Open Access
Polarization‐engineering in group III‐nitride heterostructures: New opportunities for device design
92
Citations
23
References
2011
Year
Oxide HeterostructuresMaterials ScienceSemiconductorsElectronic DevicesQuaternary NitridesElectronic MaterialsPhysicsGraded HeterojunctionsEngineeringSemiconductor TechnologyOptoelectronic MaterialsApplied PhysicsQuantum MaterialsDevice DesignMultilayer HeterostructuresOptoelectronic DevicesPiezoelectric PolarizationCategoryiii-v Semiconductor
Abstract The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.
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