IEEE Electron Device Letters · 2006 · 126 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsIii-v SemiconductorsPiezoelectric MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDry EtchingElectron MobilityEtchingGallium Nitride (Gan) MaterialsHeterostructure DevicesHeterostructure TransistorsHigh-electron-mobility TransistorsSilicon
Free-standing GaN and AlGaN/GaN cantilevers have been fabricated on (111) silicon substrate using dry etching. On these cantilevers, a piezoresistor and a high-electron-mobility transistor (HEMT) structure have been realized, and the piezoresponse has been characterized. Cantilever bending experiments resulted in a Young's modulus of approximately 250 GPa, a sensitivity of K/spl sim/90, and a modulation of the HEMT current of up to 50%. It is seen that the piezoresponse could be related to both the bulk properties and the properties of the heterostructure interface.
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Piezoresistive effect in wurtzite <i>n</i>-type GaN
Alexei Bykhovski, V. V. Kaminski, M. S. Shur et al. · Applied Physics Letters · 1996 · 201 citations
A. Krost, A. Dadgar · physica status solidi (a) · 2002 · 183 citations