Piezoelectric GaN sensor structures

Tom Zimmermann, Martin Neuburger, P. Benkart, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics +9

The electronic surface barrier of boron-doped diamond by anodic oxidation

A. Denisenko, C. Pietzka, Andriy Romanyuk, +2

Journal of Applied Physics

Materials ScienceSurface Fermi LevelChemical EngineeringBoron-doped Diamond ElectrodesEngineering +13

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Michele Dipalo, Zihao Gao, Jochen Scharpf, +7

Diamond and Related Materials

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsGan Power Device +1

Surface structure and surface barrier characteristics of boron-doped diamond in electrolytes after CF4 plasma treatment in RF-barrel reactor

A. Denisenko, Andriy Romanyuk, C. Pietzka, +2

Diamond and Related Materials

Materials ScienceCf4 Plasma TreatmentDiamond-like CarbonBoron NitrideEngineering +6

Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment

C. Pietzka, A. Denisenko, Andriy Romanyuk, +4

Diamond and Related Materials

Materials ScienceDiamond-like CarbonBoron NitrideEngineeringHexagonal Boron Nitride +5

Surface damages in diamond by Ar/O2 plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers

A. Denisenko, Andriy Romanyuk, C. Pietzka, +2

Journal of Applied Physics

EngineeringPlasma ProcessingPlasma ElectronicsElectronic DevicesBoron Nitride +14

Depletion of surface accumulation charge in InN by anodic oxidation

Andrej Denisenko, C. Pietzka, Andrey Chuvilin, +4

Journal of Applied Physics

EngineeringChemistrySurface Accumulation ChargeSemiconductor DeviceChemical Engineering +15

O-terminated nano-diamond ISFET for applications in harsh environment

Michele Dipalo, C. Pietzka, A. Denisenko, +2

Diamond and Related Materials

Diamond-like CarbonElectrical EngineeringNanoscale ScienceEngineeringNanomaterials +5

Transport behaviour of boron delta‐doped diamond

Jochen Scharpf, Andrej Denisenko, C. I. Pakes, +5

physica status solidi (a)

EngineeringCharge TransportSemiconductorsElectronic DevicesHexagonal Boron Nitride +15

Fabrication of a NCD microelectrode array for amperometric detection with micrometer spatial resolution

Elisabetta Colombo, Y. Men, Jochen Scharpf, +9

Diamond and Related Materials

Amperometric DetectionEngineeringMicroscopyMicrofabricationBioelectronics +10