Rimma Zhytnytska

Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking

Eldad Bahat‐Treidel, Oliver Hilt, Rimma Zhytnytska et al. · IEEE Electron Device Letters · 2012 · 177 citations

Engineering, Electrical Engineering, Materials Science +17

Techniques towards GaN power transistors with improved high voltage dynamic switching properties

Joachim Würfl, Oliver Hilt, Eldad Bahat‐Treidel et al. · 2013 · 65 citations

Engineering, Electrical Engineering, Microelectronics +12

Reliability issues of GaN based high voltage power devices

Joachim Wuerfl, Eldad Bahat‐Treidel, Frank Brunner et al. · Microelectronics Reliability · 2011 · 57 citations

Engineering, Electrical Engineering, Materials Science +14

High-voltage normally OFF GaN power transistors on SiC and Si substrates

Oliver Hilt, Eldad Bahat‐Treidel, A. Knauer et al. · MRS Bulletin · 2015 · 39 citations

Engineering, Electrical Engineering, Materials Science +14

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates

Oliver Hilt, Przemyslaw Kotara, Frank Brunner et al. · IEEE Transactions on Electron Devices · 2013 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +17